EXTREME TEMPERATURE PROCESSING

HIGH TEMPERATURE VACUUM SINTERING FURNACE FOR SIC

Engineered for extreme performance, our high temperature vacuum sintering furnace achieves up to 2200°C for the advanced processing of Silicon Carbide (SiC) and technical ceramics. It features a robust graphite or carbon composite heating chamber, versatile atmosphere control (Vacuum, Argon, Nitrogen), and precise ±5°C uniformity to deliver uncompromising quality in semiconductor parts, wear components, and electronic substrates.

Technical Specifications

Maximum Temperature	Up to 2200°C
Ultimate Vacuum	1 × 10⁻⁵ mbar
Temperature Uniformity	±5°C
Heating Chamber	Graphite / Carbon Composite
Atmosphere	Vacuum / Argon / Nitrogen
Control System	PLC with HMI Touchscreen
Power Supply	415V, 3 Phase, 50Hz
Chamber Size	Customizable as per application

Key Applications